Determination of the Critical Dose for Different Mass Ions Implanted into Silicon-Reference-Cited by-同舟云学术

Determination of the Critical Dose for Different Mass Ions Implanted into Silicon

Published:1973 Issue: Volume: Page:203-214
ISSN:
Container-title:Ion Implantation in Semiconductors and Other Materials
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Author:

Müller H.,Schmid K.,Ryssel H.,Ruge I.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-2064-7_18.pdf

Reference21 articles.

1. H. J. Stein, Rad. Effects 9, 195 (1971).

2. V. M. Gusev, Martynenko, C. V. Starinin, Atomic Collision Phenomena in Solids, p. 162, Ed. D. W. Thompson, P. D. Townsend American Elsevier Publ. Co. Inc., New York (1970).

3. F. H. Eisen, Ion Implantation in Semiconductors, p. 445, Ed. Eisen, L. T. Chadderton Gordon & Breach, London (1972).

4. J. W. Mayer, L. Eriksson and J. A. Davies, Ion Implantation in Semiconductors, Academic Press, New York (1970).

5. J. Lindhard, V. Nielsen, M. Scharff and P. V. Thomsen, Mat. Fys. Medd. Dan. Vid. Selsk. 33, No. 10 (1968).

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