Electronic Properties of Doping Quantum Wires-Reference-Cited by-同舟云学术

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Electronic Properties of Doping Quantum Wires

Published:1990 Issue: Volume: Page:133-138
ISSN:0258-1221
Container-title:Science and Engineering of One- and Zero-Dimensional Semiconductors
language:
Short-container-title:

Author:

Bauer Gerrit E. W.,van Gorkum Aart A.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-5733-9_15

Reference13 articles.

1. P.M. Petroff, A.C. Cossard, and W.Wicgrmann, Appl. Phys.Lett. 45: 1071 (1984).

2. T. Fukui and II. Saito, Appl. Phys. Lett. 50: 824 (1987).

3. M. Tanaka and II. Sakaki, Jap 1. Appl. Phys. 27: L2025 (1988).

4. M. Tsuchiya, J.M. Gaines, RAI. Yan, R.L. Simes, P.O. Voltz, L.A. Coldren, and P.M. Petroff, Phys. Rev. Lett. 23:466(1989).

5. M. Tanaka and II. Sakaki, Appl. Phys. Lett. in press.

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1. Incorporation mechanism of Si during delta-doping in GaAs singular and vicinal surfaces;Journal of Crystal Growth;2000-12

2. Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfaces;Journal of Electronic Materials;2000-01

3. Tailoring of Si doping layers in GaAs during molecular beam epitaxy;physica status solidi (b);1996-03-01

4. Laterally Ordered Incorporation of Impurity Atoms on Vicinal GaAs(001) Surfaces;Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates;1995

5. Decoration phenomena during planar doping of GaAs with Si and effects on magnetotransport;Physica Status Solidi (a);1994-11-16

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