Ion Implantation Through Surface Layers: A Truncated Gaussian Model

Author:

Satya A. V. S.,Palanki H. R.

Publisher

Springer US

Reference5 articles.

1. J. Lindhard, M. Scharff and H. E. Schiott, Kgl. Danske Videnskab., Mat.Fys.Medd.Dan.Vid.Selsk., 33, #14, 1963.

2. W. S. Johnson and J. F. Gibbons, “Projected Range Statistics in Semiconductors,” Stanford University Book Store, 1969.

3. S. Furukawa and H. Ishiwara, J. Appl. Phys., 43, #3, 1972.

4. L. O. Bauer, M. R. Macpherson, A. T. Robinson, and H. G. Dill, Solid State Electronics, 16, #3A, 1973.

5. International Symposium on Ion Implementation, Yorktown Heights, Dec. 11 through 14, 1972; unresolved problem of Rump Session.

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Models for implantation into multilayer targets;Applied Physics A Solids and Surfaces;1986-11

2. Ion Implantation;Process and Device Simulation for MOS-VLSI Circuits;1983

3. Calculation of ion range profiles in a double layer substrate;Radiation Effects;1982-01

4. Impurity Profile of Implanted Ions in Silicon;Impurity Doping Processes in Silicon;1981

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