Intrinsic Point Defect Clustering in Si: A Study by HVEM and HREM in Situ Electron Irradiation-Reference-Cited by-同舟云学术

Intrinsic Point Defect Clustering in Si: A Study by HVEM and HREM in Situ Electron Irradiation

Published:1997 Issue: Volume: Page:63-92
ISSN:
Container-title:In-Situ Microscopy in Materials Research
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Author:

Fedina Ludmila,Gutakovskii Anton,Aseev Alexander,Van Landuyt Joseph,Vanhellemont Jan

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4615-6215-3_4

Reference29 articles.

1. Corbett, James W., Bourgoin, Jacques C. “Point defect creation in semiconductors”. In Point defects in Solids, Vol 2. Semiconductors and Molecular Crystals, eds. J.H. Crawford, Jr., and L.M. Slifkin, Plenum Press, New York and London, p. 15, 1975.

2. Aseev, Alexander L., Fedina, Ludmila I., Detlef, Hoehl and Barsch., Heinz. Clusters of interstitial atoms in silicon and'germanium, Berlin, Academie Verlag, 1994.

3. Vanhellemont J, Romano-Rodriguez A, Fedina L„ Van Landuyt J, and Aseev A. Point defect reactions in silicon studied in situ by high flux electron irradiation in a high voltage transmission electron microscope. Material Science and Technology, 1995, 11, 1194–1202.

4. Fedina L and Aseev A. Study of interaction of point defects with dislocations in silicon by means of irradiation in an electron microscope. Physica Status Solidi (a) 1986, 95, 517–529.

5. Oshima R.. and Hua G.C. Characterization of Czochralski Si crystals by HVEM. Ultramicroscopy 1991, 39, 160–170.

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