Characterization of Czochralski Si crystals by HVEM
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Point Defects;Kiritani,1977
2. The dynamic observation of the formation of defects in silicon under electron and proton irradiation
3. {113} Loops in electron-irradiated silicon
4. Nature of Secondary Defects in Silicon Produced by High Temperature Electron Irradiation
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1. Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation;Advances in Semiconductor Nanostructures;2017
2. 2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si;physica status solidi (a);2012-07-23
3. Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation;Philosophical Magazine;2011-01-21
4. Formation of Extended Defects in Polycrystalline SiGe by Electron Irradiation;Solid State Phenomena;2003-06
5. In-situ HRTEM observation of the melting-crystallization process of silicon;Journal of Crystal Growth;2002-03
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