X-Ray Topography and TEM Study of Crystal Defect Propagation in Epitaxially Grown AlGaAs Layers on GaAs(001)
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Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-1-4615-3744-1_56
Reference9 articles.
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2. K.H. Chang, P.K. Bhattacharya, and R. Gibala, “Characteristics of Dislocations at Strained InGaAs/GaAs Interfaces”, JAppl Phys. 66(7):2993 (1989)
3. D.C. Houghton, D.D. Perovic, J.-M. Baribeau, and G.C. Weatherly, “Misfit Strain Relaxation in GexSil-x/Si Heterostructures: The Structural Stability of Buried Strained Layers and Strained-Layer Superlattices”, JApplPhys. 67(4):1850 (1990)
4. W.J. Boettinger, H.E. Burdette, M. Kuriyama, and R.E. Green Jr. “Asymmetric Crystal Topographic Camera”, RevSci. Instrum. 47(8):906 (1976)
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recent Applications of X-Ray Topography to the Study of III-V Semiconductors;Control of Semiconductor Interfaces;1994
2. X-Ray DCD and EPMA Measurements of Al Concentration in Epitaxial AlxGa1-xAs/GaAs Layers;Advances in X-ray Analysis;1992
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