1. S. M. Sze, Physics of Semiconductor Devices( Wiley-Interscience, New York, 1969 ), p. 30.
2. D. J. Ashen, P. J. Dean, D. T. Hurle, J. B. Mullin, A. M. White, P. D. Greene, J. Phys. Chem. Solids 36, 1041 (1975).
3. H. Winston, H. Kimura, A. T. Hunter, C. B. Afable, R. Baron, J. P. Baukus, M. H. Young and 0. J. Marsh, “Growth and Characterization of LEC-PBN Undoped Gallium Arsenide,” paper presented at AACG/West Sixth Conference on Crystal Growth, June 1–4, 1982, Fallen Leaf Lake, California.
4. A. T. Hunter, R. Baron, J. P. Baukus, H. Kimura, M. H. Young, H. Winston and 0. J. Marsh, “Temperature-Dependent Hall Measurements on LEC GaAs,” paper presented at 2nd Conference on Semi-Insulating III-V Materials, Evian, France, April 19 – 21, 1982.
5. P. 0. Yu and D. C. Reynolds, J. Appl. Phys. 53, 1263 (1982).