High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons-Reference-Cited by-同舟云学术

High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons

Published:1997-07 Issue:7 Volume:31 Page:686-690
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Brudnyi V. N.,Novikov V. A.,Peshev V. V.,Kolin N. G.,Noifekh A. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187066.pdf

Reference16 articles.

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3. N. G. Kolin, L. V. Kulikova, V. B. Osvenskii, S. P. Solov’ev, and V. A. Kharchenko, Fiz. Tekh. Poluprovodn. 18, 2187 (1984) [Sov. Phys. Semicond. 18, 1364 (1984)].

4. N. G. Kolin, L. V. Kulikova, and V. B. Osvenskii, Fiz. Tekh. Poluprovodn. 22, 1025 (1988) [Sov. Phys. Semicond. 22, 646 (1988)].

5. A. V. Kartavykh, S. P. Grishina, M. G. Mil’vidskii, N. S. Rytova, I. V. Stepanova, and E. S. Yurova, Fiz. Tekh. Poluprovodn. 22, 1004 (1988) [Sov. Phys. Semicond. 22, 633 (1988)].

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