Oxide Degradation Mechanisms in MOS Transistors
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Springer US
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http://link.springer.com/content/pdf/10.1007/978-1-4615-3250-7_2.pdf
Reference40 articles.
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3. T.-C. Ong, P.-K. Ko and C. Hu, “Hot-carrier current modeling and device degradation in surface-channel p-MOSFET’s,” IEEE Trans. Electron Devices, vol. 37, pp. 1658–1666, July 1990.
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