An Update on Standards Activity for Txrf and the Challenges Ahead

Author:

Hockett R. S.

Publisher

Springer US

Reference13 articles.

1. R. S. Hockett, “TXRF Semiconductor Applications,” Advances in X-Ray Analysis Vol. 37. edited by J. V. Gilfrich et al, Plenum Press (New York, NY) pp. 565–575 (1994).

2. R. S. Hockett, “TXRF Reference Standards: A Discussion,” Contamination Control and Defect Reduction in Semiconductor Manufacturing III, edited by Dennis N. Schmidt, ECS Proceedings Vol. 94-9, The Electrochemical Society, pp. 323–338 (1994).

3. R. S. Hockett, J. M. Metz, and S. Tan, “Quantification Issues for VPD/TXRF,” Proceedings of the Second International Symposium on Ultra-clean Processing of Silicon Surfaces, edited by March Heyns, published by Uitgeverij Acco, Leuven, Belgium, pp. 171–176 (1994).

4. R. S. Hockett, “A Review of Standardization Issues for TXRF and VPD/TXRF”, Advances in X-Rav Chemical Analysis, Japan, Vol. 26s, pp. 79–84 (1995).

5. Astm F 1526, “Standard Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy,” 1995 Annual Book of ASTM Standards, Vol. 10.05, American Society for Testing and Materials, Philadelphia, PA, 1995.

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