Field Effect Transistors for Terahertz Detection and Emission-Reference-Cited by-同舟云学术

Field Effect Transistors for Terahertz Detection and Emission

Published:2010-05-04 Issue:5 Volume:32 Page:618-628
ISSN:1866-6892
Container-title:Journal of Infrared, Millimeter, and Terahertz Waves
language:en
Short-container-title:J Infrared Milli Terahz Waves

Author:

Knap Wojciech,Nadar Salman,Videlier Hadley,Boubanga-Tombet Stephane,Coquillat Dominique,Dyakonova Nina,Teppe Frederic,Karpierz Kristoph,Łusakowski Jerzy,Sakowicz Maciej,Kasalynas Irmantas,Seliuta Dalius,Valusis Gintaras,Otsuji Taiichi,Meziani Yahya,El Fatimy Abdel,Vandenbrouk Simon,Madjour Kamel,Théron Didier,Gaquière Christophe

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Radiation

Link

http://link.springer.com/content/pdf/10.1007/s10762-010-9647-7.pdf

Reference27 articles.

1. M. I. Dyakonov and M. S. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71, 2465 (1993).

2. M. I. Dyakonov and M. S. Shur, “Plasma wave electronics: novel terahertz devices using two dimensional electron fluid,” IEEE Trans. Electron Devices 43, 380 (1996).

3. W. Knap, J. Łusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov et al., “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84, 3523 (2004).

4. N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev et al., “Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors,” J. Appl. Phys. 97, 4313 (2005).

5. N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson et al., “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88, 141906 (2006).

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