1. J. F. AIEGLER, G. W. COLE, J. E. E. BAGLIN, J. Appl. Phys., 43 (1972) 3809.
2. R. G. DOWNING, J. T. MAKE, R. F. FLEMING, in: Microelectronics Processing: Inorganic Materials Characterization, ACS Symp. Series, No. 295 (1986) 163.
3. The loan of a3He implanted silicon wafer from R. G. DOWNING at NIST, Gaithersburg, MD 20899 USA, is gratefully acknowledged.
4. “Profil” program provided by R. G. DOWNING, NIST.
5. R. G. DOWNING, J. J. MAKI, R. F. FLEMING, J. Radioanal. Nucl. Chem., 112 (1987) 33.