AlInGaN 310 nm ultraviolet metal-insulator-semiconductor sensors with photo-chemical-vapor-deposition SiO2 cap layers
Author:
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics
Link
http://link.springer.com/content/pdf/10.1007/s10043-009-0070-z.pdf
Reference25 articles.
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