GaN MIS Photodetectors with l,3-bis [2-(2,20-bipyridin-6–yl) -1,3,4-oxadiazol-5-yl]-benzene (Bpy-OXD) Insulators
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Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-319-04573-3_138
Reference8 articles.
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2. Kim, J., Kim, H., & Lee, S. N. (2011). Thermal degradation in InGaN quantum wells in violet and blue GaN-based laser diodes. Current Applied Physics, 11, S167–S170.
3. Souissi, M., Schmerber, G., Derory, A., & Jani, B. E. (2012). Effects of high-temperature annealing on magnetic properties of V-doped GaN thin films grown by MOCVD. Journal of Magnetism and Magnetic Materials, 324, 2539–2542.
4. Müller, A., Konstantinidis, G., Androulidaki, M., Dinescu, A., Stefanescu, A., & Cismaru, A., et al. (2012). Front and backside-illuminated GaN/Si based metal-semiconductor-metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies. Thin Solid Films 520, 2158–2161.
5. You, K., Jiang, H., Li, D., Sun, X., Song, H., & Chen, Y., et al. (2012). Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors. Applied Physics Letters, 100, 121109.
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