3-D Observation of dopant distribution at NAND flash memory floating gate using Atom probe tomography-Reference-Cited by-同舟云学术

3-D Observation of dopant distribution at NAND flash memory floating gate using Atom probe tomography

Published:2015-01 Issue:1 Volume:11 Page:60-64
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Lee Ji-hyun,Chae Byeong-Kyu,Kim Joong-Jeong,Lee Sun Young,Park Chan Gyung

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-014-4194-3.pdf

Reference14 articles.

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2. A. Fazio, MRS Bull. 29, 814 (2004).

3. C. W. Byun, S. W. Son, Y. W. Lee, H. M. Kang, S. A. Park, W. C. Lim, T. Li, and S. K. Joo, Electron. Mater. Lett. 8, 107 (2012).

4. S. Aritome and T. Kikkawa, Solid-State Electron. 82, 54 (2013).

5. H. Watanabe, IEEE Trans. Electron Devices 54, 38 (2007).

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