Strong correlation between capacitance and breakdown voltage of GaInN/GaN light-emitting diodes-Reference-Cited by-同舟云学术

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Strong correlation between capacitance and breakdown voltage of GaInN/GaN light-emitting diodes

Published:2014-11 Issue:6 Volume:10 Page:1155-1157
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Cho Jaehee,Schubert E. F.,Son Joong Kon,Kim Dong Yeong,Kim Jong Kyu

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-014-4008-7.pdf

Reference15 articles.

1. E. F. Schubert and J. K. Kim, Science 308, 1274 (2005).

2. M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, J. Disp. Technol. 3, 160 (2007).

3. S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, Nat. Photon. 3, 180 (2009).

4. T. Yanagisawa, Microelectron. Reliab. 37, 1239 (1997).

5. Q. Shan, Q. Dai, S. Chhajed, J. Cho, and E. F. Schubert, J. Appl. Phys. 108, 084504 (2010).

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