Effects of Oxygen Plasma Power on Electrical Characteristics in Multi-Stacked Indium Zinc Oxide Transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s13391-021-00274-z.pdf
Reference36 articles.
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4. Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., Hosono, H.: Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature. 432, 488 (2004)
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