Strain-Dependent Polar Optical Phonon Scattering and Drive Current Optimization in Nanoscale Monolayer MoS2 FETs
Author:
Funder
Directorate for Engineering
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s13391-020-00214-3.pdf
Reference40 articles.
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3. Krasnozhon, D., Lembke, D., Nyffeler, C., Leblebici, Y., Kis, A.: MoS2 transistors operating at gigahertz frequencies. Nano Lett. 14, 5905–5911 (2014)
4. Jena, D., Konar, A.: Enhancement of carrier mobility in semiconductors nanostructures by dielectric engineering. Phys. Rev. Lett. 98(13), 6805 (2007)
5. Lin, M.W., Liu, L., Lan, Q., Tan, X., Dhindsa, K.S., Zeng, P., Naik, V.M., Cheng, M.M.C., Zhou, Z.: Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with polymer electrolyte. J. Phys. D Appl. Phys. 45, 345102 (2012)
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