Preparation of Highly (002) Oriented Ti Films on a Floating Si (100) Substrate by RF Magnetron Sputtering-Reference-Cited by-同舟云学术

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Preparation of Highly (002) Oriented Ti Films on a Floating Si (100) Substrate by RF Magnetron Sputtering

Published:2019-11-16 Issue:1 Volume:16 Page:14-21
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Kwon Ji Hye,Kim Du Yun,Kim Kun-Su,Hwang Nong-Moon

Funder

National Research Foundation of Korea

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-019-00182-3.pdf

Reference21 articles.

1. Jackson, N., O’Keeffe, R., Waldron, F., O’Neill, M., Mathewson, A.: Influence of aluminum nitride crystal orientation on MEMS energy harvesting device performance. J. Micromech. Microeng. 23(7), 1–9 (2013). https://doi.org/10.1088/0960-1317/23/7/075014

2. Tran, A.T., Wunnicke, O., Pandraud, G., Nguyen, M.D., Schellevis, H., Sarro, P.M.: Slender piezoelectric cantilevers of high quality AlN layers sputtered on Ti thin film for MEMS actuators. Sens. Actuators A Phys. 202, 118–123 (2013). https://doi.org/10.1016/j.sna.2013.01.047

3. Ting, C., Wittmer, M.: The use of titanium-based contact barrier layers in silicon technology. Thin Solid Films 96, 327–345 (1982)

4. Huang, L., Liu, B., Zhu, Q., Chen, S., Gao, M., Qin, F., Wang, D.: Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing. Appl. Phys. Lett. 100(26), 1–4 (2012). https://doi.org/10.1063/1.4730435

5. Suzuki, M., Kawakami, T., Arai, T., Kobayashi, S., Koide, Y., Uemura, T., Shibata, N., Murakami, M.: Low-resistance Ta/Ti Ohmic contacts for p-type GaN. Appl. Phys. Lett. 74(2), 275–277 (1999). https://doi.org/10.1063/1.123279

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1. Electron beam deposited thin titanium films and its thermal oxidation to form rutile TiO2 thin films;AIP Conference Proceedings;2024

2. Ti thin films deposited by high-power impulse magnetron sputtering in an industrial system: Process parameters for a low surface roughness;Vacuum;2022-01

3. Impact of Radio Frequency Plasma Power on the Structure, Crystallinity, Dislocation Density, and the Energy Band Gap of ZnO Nanostructure;ACS Omega;2021-11-17

4. Effects of Sputtering Power, Working Pressure, and Electric Bias on the Deposition Behavior of Ag Films during DC Magnetron Sputtering Considering the Generation of Charged Flux;Electronic Materials Letters;2021-10-19

5. Non-classical Crystallization of Bulk Crystals in Solution and of Thin Films in the Gas Phase by Chemical Vapor Deposition;Electronic Materials Letters;2021-10-18

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