Spin Precession and Spin‐Charge Conversion in a Strong Rashba Channel at Room Temperature-Reference-Cited by-同舟云学术

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Spin Precession and Spin‐Charge Conversion in a Strong Rashba Channel at Room Temperature

Published:2021-03-27 Issue:4 Volume:17 Page:324-330
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Kim Seong Been,Jeon Jeehoon,Kim Hyung-jun,Chang Joonyeon,Koo Hyun Cheol^ORCID

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

Korea University- Korea Institute of Science and Technology (KU-KIST) Institutional Programs

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s13391-021-00286-9.pdf

Reference33 articles.

1. Lou, X., Adelmann, C., Crooker, S.A., Garlid, E.S., Zhang, J., Reddy, K.S.M., Flexner, S.D., Palmstrøm, C.J., Crowell, P.A.: Electrical detection of spin transport in lateral ferromagnet-semiconductor devices. Nat. Phys. 3, 197–202 (2007)

2. Koo, H.C., Kwon, J.H., Eom, J., Chang, J., Han, S.H., Johnson, M.: Control of spin precession in a spin-injected field effect transistor. Science 325, 1515–1518 (2009)

3. Fert, A., Jaffrès, H.: Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor. Phys. Rev. B 64, 184420 (2001)

4. Schmidt, G., Ferrand, D., Molenkamp, L.W.: Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor. Phys. Rev. B 62, R4790–R4793 (2000)

5. Hirsch, J.E.: Spin hall effect. Phys. Rev. Lett. 83, 1834–1837 (1999)

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