Characterization of InP Layers Prepared by LPE Using Ytterbium and Erbium Admixture
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Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-011-5012-5_27
Reference4 articles.
1. Gao, W. and Berger, P.R. (1996) Liquid phase epitaxial growth of InGaAs on InP using rare-earth-treated melts, J. Appl. Phys. 80, 7094–7103.
2. Novotný, J. and Procházková, O. (1992) LPE Growth of GalnAsP/InP Heterostructures for 1.3 µm Planar Buried Mesa Lasers, Crystal Res. Technol. 27, 481–489.
3. Walukiewicz, W. at al (1980) Electron mobility and free carrier absorption in InP; determination of the con — centration ratio, J. Appl. Phys. 51, 2659–2668.
4. Properties of Indium Phosphide, INSPEC 1991, EMIS Datareviews Series No. 6, Chapter 9, 165–172.
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1. Effect of rare earth addition on liquid phase epitaxial InP-based semiconductor layers;Materials Science and Engineering: B;1999-12
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