Author:
Mokrushin A. D.,Omeljanovskaja N. M.,Leonov A. V.,Mordkovich V. N.,Pazhin D. M.
Reference4 articles.
1. Nazarov, A.N. (1995) Problems of radiation hardness of SOI structures and devices, in J.P. Colinge et al. (eds.), Physical and Technical Problems of SOI Structures and Devices, 217–239.
2. Akimov, A.G., Barabanenkov, M.Yu., Baranochnikov, M.L., Leonov, A.V., Mokrushin, A.D., Mordkovich, V.N., Omelyanovskaja, N.M. (1998) A Controllable Resistor with features of a Field-Effect Transistor and Field Hall-Effect sensor. Instruments and Experimental Techniques 41, 706–709.
3. Flament, O., Herve, D., Musseau, D., Bonnel, P., Rafaelli, M., Leray, J.L., Morgail, S., Giffard, B., Auberton-Herve, A.J. (1992) Field dependent charge trapping effects in SIMMMOX buried oxides at very high dose, IEEE Trans. Nucl. Sci. 39, 2132–2138.
4. Paillet, P., Autran, J.L., Flument, O., Leray, J.L., Aspor, B., Auberton-Herve, A.J. (1996) X-radiation response of SIMOX buried oxides: influence of the fabrication process, IEEE Trans. Nucl. Sci. 43, 821–825.