X-radiation response of SIMOX buried oxides: influence of the fabrication process-Reference-Cited by-同舟云学术

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X-radiation response of SIMOX buried oxides: influence of the fabrication process

Published:1996-06 Issue:3 Volume:43 Page:821-825
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Paillet P.,Autran J.L.,Flament O.,Leray J.L.,Aspar B.,Auberton-Herve A.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx1/23/10976/00510719.pdf?arnumber=510719

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bias Dependence of Total-Dose Effects in Bulk FinFETs;IEEE Transactions on Nuclear Science;2013-12

2. Research on metastable electron traps in the modified SOI materials induced by Si ion implantation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-03

3. Research on ion implantation effect on SIMOX material modification technique by X-ray photoelectron spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04

4. Total Ionizing Dose Effects on Triple-Gate FETs;IEEE Transactions on Nuclear Science;2006-12

5. Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation;Semiconductor physics, quantum electronics and optoelectronics;2006-04-30

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