Dislocations in GaAs Crystals-Reference-Cited by-同舟云学术

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Dislocations in GaAs Crystals

Published:1987 Issue: Volume: Page:3-24
ISSN:
Container-title:Defects and Properties of Semiconductors
language:
Short-container-title:

Author:

Sumino Koji

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-009-4766-5_1.pdf

Reference71 articles.

1. J. P. Hirth and J. Lothe: Theory of Dislocations( McGraw-Hill, New York 1968 ) p. 353.

2. H. Gottschalk, G. Patzer, and H. Alexander: Phys. Stat. Sol. (a) 45(1978) 207.

3. A. M. Gomez and P. B. Hirsch: Phil. Mag. A38(1978) 733.

4. M. Sato, K. Hiraga, and K. Sumino: unpublished work.

5. M. Tanaka and B. Jouffrey: Phil. Mag. A50(1984) 733.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Identification of individual and aligned microdefects in bulk vertical Bridgman- and liquid encapsulated Czochralski-grown GaAs;Materials Science and Engineering: B;1998-08

2. InP - the basic material of integrated optoelectronics for fiber communication systems;Physica Scripta;1991-01-01

3. On the influence of light on dislocation motion in compound semiconductors;Journal of Electronic Materials;1990-09

4. Defect Structure in Low and High Misfit Systems;Evaluation of Advanced Semiconductor Materials by Electron Microscopy;1989

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