InP - the basic material of integrated optoelectronics for fiber communication systems
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/1991/i=T35/a=043/pdf
Reference70 articles.
1. Unstable Regions in III-V Quaternary Solid Solutions Composition Plane Calculated with Strictly Regular Solution Approximation
2. III–V Technology: The Key for Advanced Devices
3. Iii–V Semiconductor Devices
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1. Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades;Crystal Research and Technology;2019-09-30
2. Nanocontact Disorder in InP Nanowire Devices for the Enhancement of Visible Light and Oxygen Gas Sensitivities;Procedia IUTAM;2017
3. Photoluminescence Enhancement of InAs(Bi) Quantum Dots by Bi Clustering;Applied Physics Express;2013-04-01
4. Submicrometre periodic surface structures in InP induced by nanosecond UV laser pulses;Journal of Physics D: Applied Physics;2008-06-30
5. Characterization of InP porous layer by high-resolution X-ray diffraction;physica status solidi (a);2007-08
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