Atomistic Aspects of Sige Nanostructure Formation by Molecular-Beam Epitaxy
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Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-010-0391-9_28
Reference14 articles.
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3. Kubler, L., Dentel, D., Bischoff, J.L., Ghica, C., Ulhag-Bouillet, C. and Werckmann, J. (1998) Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si1-x Gex x hut islands, Appl. Phys. Lett. 73, pp. 1053–1055.
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