Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on Gaas and Si Substrates-Reference-Cited by-同舟云学术

Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on Gaas and Si Substrates

Published:2002 Issue: Volume: Page:467-475
ISSN:
Container-title:Atomistic Aspects of Epitaxial Growth
language:
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Author:

Bak-Misiuk J.,Misiuk A.,Adamczewska J.,Calamiotou M.,Kozanecki A.,Kuristyn D.,Reginski K.,Kaniewski J.,Georgakilas A.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-010-0391-9_36

Reference9 articles.

1. Bak-Misiuk, J., Adamczewska, J., Domagala, J., Z.R.Zytkiewicz, Z.R., Trela, J., Misiuk, A., Leszczynski, M., Jun, J., Surma, H.B. and Wnuk, A. (1999) Influence of high hydrostatic pressure-high temperature treatment on defect structure of AlGaAs layer, J. Alloy. Comp. 286, pp. 279–283.

2. Bak-Misiuk, J., Domagala,. Misiuk, A., SadowsH, J., Zytkiewicz,. Z.R., Trela,. J. and Antonova, I.V. (2000) Effect of stress on interface transformation in thin semiconducting layer, Thin Solid Films 380, pp. 117–119.

3. Misiuk, A. (2000) High pressurehigh temperature treatment to create oxygen nan-oclusters and defects in single crystalline silicon, Mater. Phys. Mech. 1, pp. 119–126.

4. Misiuk, A., Surma, H.B., Antonova, I.V., Popov, V.P., Bak-Misiuk, J., Lopez, M., Romano-Rodríguez, A., Barcz, A. and Jun, J. (1999) Effect of external stress applied during annealing on hydrogenand oxygenimplanted silicon, Solid State Phenom. 69-79, pp. 345–350.

5. Misiuk, A., Barcz, A., Ratajczak, J., Lopez, M., Romano-Rodríguez, Bak-Misiuk, J., Surma, H.B., Jun, J., Antonova, I.V. and Popov, V.P. (2000) Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen, Mater. Sd. Bng. B 73, pp. 134–138.