1. Marrian C.R.K., Dobisz, E.A., and Peckerar, M.C. (1991) Nanostructure Patterning, Proc.IEEE,79, 1149–1158.
2. Rhee, K.W., Ma, D.I., and Peckerar, M.C. (1992) Proximity Effect Reduction in X-Ray Mask Making using Thin Silicon Dioxide Layers, J. Vac. Sci. Technol. B 10, 3062–3066.
3. Dobisz, E.A., Marrian, C.R.K., Shirey, L.M., and Ancona, M. (1992) Thin Silicon Nitride Films for Reduction of Linewidth and Proximity Effects in Electron-Beam Lithography, J. Vac. Sci. Technol. B 10, 3067–3071.
4. Rhee, K.W. and Peckerar, M.C. (1993) Proximity Effect Reduction using Thin Insulating Layers, Appl. Phys. Lett. 62, 533–534.
5. Dobisz, E.A., Marrian, C.R.K., Salvino, R.E., Ancona, M.A., Rhee, K.W., and Peckerar, M.C. (1993) Thin Silicon Nitride Films to Increase Resolution in E-Beam Lithography, Sox. Photo. Inst. Eng. 1924, 141–149.