Author:
Kiv A. E.,Maximova T. I.,Soloviev V. N.
Reference12 articles.
1. Srivastava, G.P. (1997) Microstructure of the silicon surface layers, Rep. Prog. Phys.
60, 561–613.
2. Bechstedt, F., Enderline, R. (1988) Semiconductor Surfaces and Interfaces (Their Atomic and Electronic Structures), Akademie-Verlag, Berlin.
3. Abraham, F.F., Batra, I.P. (1985) Molecular dynamics simulation of semiconductor surface layers, Surf Sei.
163, L752–L758.
4. Khakimov, Z.M., (1994) Ab initio calculation of electronic structure of a-Si, Computer Mater. Sei.
3, 94–108.
5. Zhang, P.X., Mitchell, P.X., Tong, B.Y. et al. (1994) Ion-beam treatment of Si surfaces, Phys. Rev.
B50, 17080–17084.
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