Can Any Design Support an Effective Nanostructure Lasing for a Few THz?

Author:

Shvartsman L. D.,Laikhtman B.

Publisher

Springer Netherlands

Reference9 articles.

1. B. Laikhtman and L. D. Shvartsman, “THz emitter based on InAs/GaSb coupled quantum wells: New prospects for THz photonics”, Proceedings of SPIE Vol. 5727 (SPIE, Bellingham, WA, 2005) p. 54.

2. L. D. Shvartsman, B. Laikhtman “InAs-GaSb laser: Prospects for efficient terahertz emission”, APL Vol. 93 p. 131104 (2008).

3. S. de-Leon, L.D.Shvartsman, and B. Laikhtman, “Band structure of coupled InAs/GaSb quantum wells”, Phys. Rev. B 60, 1861-1870 (1999).

4. B.Laikhtman, Smadar de-Leon, and L.D.Shvartsman, “Energy spectrum of InAs/GaSb heterostructures”, Solid State Commun. 104, 257-262 (1997).

5. L.D.Shvartsman, B.D.Laikhtman, “Semiconductor-semimetal transitions in InAs-GaSb coupled quantum wells”, Physics of Semiconductors, pp.1-9, Paper D58 in CDROM, Conference Series Number 171 (Institute of Physics Publishing, Bristol and Philadelphia, 2003).

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