Mocvd Growth and Characterisation of Inas/Gaas Superlattices
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Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-009-0245-9_18.pdf
Reference5 articles.
1. Dutta, N.K., Chand, N., Lopata, J. and Wetzel, R. (1993) Temperature characteristics of InAs/GaAs short-period superlattices quantum well laser, Appl.Phys.Lett. 62, 2018 – 2020
2. Marzin, J.-Y., Gerard, J.-M., Izrael, A., Barrier, D. and Bastard, G. (1994) Photolumine¬scence of single InAs quantum dots obtained by self-organized growth on GaAs, Phys.Rev. Lett. 73, 716 – 719
3. Bressler-Hill,V., LorkeA, Varma,S., PetroffJP.M., Pond, K. and Weinberg,W.H. (1994) Initial stages of InAs epitaxy on vicinal GaAs (001X2x4), Phys.Rev.B 50, 8479 – 8487
4. Schwabe, R., Pietag, F., Faulkner, M., Lassen, S., Gottschalch, V., Franzheld, R., Bitz,A. and Staehli, J.L. (1994) Optical investigations on isovalent d-layers in III-V semiconductor compounds, submitted to J.Appl.Phys.
5. Brandt, O., Lage, H. and Ploog, K. (1992) Heavy and light-hole character of optical transitions in InAs/GaAs single-monolayer quantum wells, Phys.Rev.B 45, 4217 – 4220
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