Investigation of interface trap charges and temperature variation in heterostacked-TFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
https://link.springer.com/content/pdf/10.1007/s12648-020-01834-z.pdf
Reference43 articles.
1. S Chakraborty, A Mallik, C K Sarkar and V R Rao IEEE Trans. Electron Devices. 54 241 (2007)
2. D J Frank, R H Dennard, E Nowak, P M Solomon, Y Taur and H S P Wong Proc. IEEE 89 259 (2001)
3. M Koh, W Mizubayashi, K Iwamoto, H Murakami, T Ono, M Tsuno, T Mihara, K Shibahara, S Miyazaki and M Hirose IEEE Trans. Electron Devices. 48 259 (2001)
4. R Muralidhar, I Lauer, J Cai, D J Frank and P Oldiges IEEE Trans. Electron Devices 63 524 (2016)
5. Y Khatami and K Banerjee IEEE Trans. Electron Devices. 56 2752 (2009)
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