1. Aoki Y, Wiemann C, Feyer V, Kim H-S, Schneider CM, Ill-Yoo H, Martin M (2014) Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behavior. Nat Comm 5:1
2. Arai T, Shiratani Y (2012) Manufacturing issues for oxide TFT technologies for large-sized AMOLED displays. SID 2012 Digest, p 756
3. Chen C-Y, Lin L-F, Lee J-Y, Wu W-H, Wang S-C, Chiang Y M, Chen Y-H, Chen C-C, Chen Y-H, Chen C-L, Shih T-H, Liu C-H, Ting H-C, Lu H-H, Tsai L, Lin H-S, Chang L-H, Lin Y-H (2013) A 65-inch amorphous oxide thin film transistors active-matrix organic light-emitting diode television using side by side and fine metal mask technology. SID 2013 Digest, p 247
4. Cheong W-S, Lee J-M, Lee J-H, Park S-HK, Yoon SM, Byun C-W, Yang S, Chung SM, Cho KI, Hwang C-S (2009) Effects of interfacial dielectric layers on the electrical performance of top-gate In-Ga-Zn-Oxide thin-film transistors. ETRI J 31:660–666
5. Cho SH, Park S-HK, Hwang C-S, Ryu MK, Eom IY, Kim JW, Yang J-H, Kim H-O, Kwon O-S, Park E-S, Lim SK (2014) High mobility and highly stable aluminum-doped indium zinc tin oxide thin-film transistors. SID 2014 Digest, p 473