Study of Extended Back Gate Double Gate JunctionLess Transistor: Theoretical and Numerical Investigation
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-97604-4_98
Reference7 articles.
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3. C.-W. Lee, A. Afzalian, N.D. Akhavan, R. Yan, I. Ferain, J.-P. Colinge, Junctionless multigate field-effect transistor. Appl. Phys. Lett. 94(5), 053511–053512 (2009)
4. S. Sahay, M.J. Kumar, Symmetric operation in an extended back gate JLFET for scaling to the 5-nm regime considering quantum confinement effects. IEEE Trans. Electron Devices 64(1), 21–27 (2017)
5. J. Lee, H.E. Shin, Evanescent-mode analysis of short-channel effects in MOSFETs. J. of Korean Phys. Soc. 44(1), 50–55 (2004)
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