Breakdown Experiments
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-43220-5_5
Reference26 articles.
1. Achanta, R. S., Gill, W. N., & Plawsky, J. L. (2008). Copper ion drift in integrated circuits: Effect of boundary conditions on reliability and breakdown of low-κ dielectrics. Journal of Applied Physics, 103(1), 014907–014907.6.
2. Achanta, R. S., Plawsky, J. L., & Gill, W. N. (2007). A time dependent dielectric breakdown model for field accelerated low-κ breakdown due to copper ions. Applied Physics Letters, 91(23), 234106–234106.3.
3. Ahn, S. H., Kim, T. S., Nguyen, V. H., Park, O., Han, K., Lee, J. H., … Chung, C. (2012, June). Successful recovery of moisture-induced TDDB degradation for Cu/ULK (k = 2.5) BEOL interconnect. In 2012 I.E. International Interconnect Technology Conference (IITC) (pp. 1–3). Piscataway , NJ : IEEE.
4. Bao, J., Shi, H., Liu, J., Huang, H., Ho, P. S., Goodner, M. D., … Kloster, G. M. (2008). Mechanistic study of plasma damage of low k dielectric surfaces. Journal of Vacuum Science & Technology B, 26(1), 219–226.
5. Berman, A. (1981, April). Time-zero dielectric reliability test by a ramp method. In 19th Annual Reliability Physics Symposium, 1981 (pp. 204–209). Piscataway , NJ : IEEE.
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