General Theories
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-43220-5_2
Reference21 articles.
1. Achanta, R. S., Gill, W. N., & Plawsky, J. L. (2008). Copper ion drift in integrated circuits: Effect of boundary conditions on reliability and breakdown of low-κ dielectrics. Journal of Applied Physics, 103(1), 014907–014907.6.
2. Achanta, R., & McLaughlin, P. (2011, April). A charge transport based acceleration model for interlevel dielectric breakdown. In 2011 I.E. International Reliability Physics Symposium (IRPS) (pp. BD.2.1–BD.2.5). IEEE, Piscataway, NJ.
3. Achanta, R., & McLaughlin, P. (2014). A charge transport model for SiCOH dielectric breakdown in copper interconnects and its applications. IEEE Transactions on Device and Materials Reliability, 14(1), 133–138.
4. Achanta, R. S., Plawsky, J. L., & Gill, W. N. (2007). A time dependent dielectric breakdown model for field accelerated low-κ breakdown due to copper ions. Applied Physics Letters, 91(23), 234106–234106.3.
5. Allers, K. H. (2004). Prediction of dielectric reliability from I- V characteristics: Poole–Frenkel conduction mechanism leading to E1/2 model for silicon nitride MIM capacitor. Microelectronics Reliability, 44(3), 411–423.
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