Physical and Electrical Characterisation of 3C-SiC and 4H-SiC for Power Semiconductor Device Applications
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-03002-9_240
Reference4 articles.
1. R. Anzalone, A. Severino, G. D’Arrigo, C. Bongiorno, G. Abbondanza, G. Foti, S. Saddow, and F. La Via, “Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates,” Journal of Applied Physics, vol. 105, pp. 084910-7, 2009.
2. M. R. Jennings, A. Perez-Tomas, A. Severino, P. Ward, A. Bashir, C. Fisher, S. M. Thomas, P. M. Gammon, B. T. Donnellan, H. Rong, D. P. Hamilton, and P. A. Mawby, “Innovative 3C-SiC on SiC via Direct Wafer Bonding,” in Silicon Carbide and Related Materials 2012. vol. 740-742, A. A. Lebedev, S. Y. Davydov, P. A. Ivanov, and M. E. Levinshtein, Eds., ed, 2013, pp. 271-274.
3. M. R. Jennings, A. Perez-Tomas, A. Bashir, A. Sanchez, A. Severino, P. J. Ward, S. M. Thomas, C. Fisher, P. M. Gammon, M. Zabala, S. E. Burrows, B. Donnellan, D. P. Hamilton, D. Walker, and P. A. Mawby, “Bow Free 4 ‘‘ Diameter 3C-SiC Epilayers Formed upon Wafer-Bonded Si/SiC Substrates,” Ecs Solid State Letters, vol. 1, pp. P85-P88, 2012.
4. Z. C. Wang, M. Saito, S. Tsukimoto, and Y. Ikuhara, “Terraces at ohmic contact in SiC electronics: Structure and electronic states,” Journal of Applied Physics, vol. 111, Jun 2012.
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