Optical Properties of Defects
Author:
Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-319-06540-3_17-4
Reference91 articles.
1. Abram RA (1993) Effects of heavy doping and high excitation on the band structure of gallium arsenide. Semicond Semimetals 39:259
2. Abram RA, Rees GJ, Wilson BLH (1978) Heavily doped semiconductors and devices. Adv Phys 27:799
3. Aleksandrov IA, Zhuravlev KS (2020) Luminescence line shapes of band to deep centre and donor–acceptor transitions in AlN. J Phys Condens Matter 32:435501
4. Alkauskas A, Lyons JL, Steiauf D, Van de Walle CG (2012) First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO. Phys Rev Lett 109:267401
5. Alkauskas A, Yan Q, Van de Walle CG (2014) First-principles theory of nonradiative carrier capture via multiphonon emission. Phys Rev B 90:075202
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