Luminescence line shapes of band to deep centre and donor–acceptor transitions in AlN
Author:
Funder
Russian Science Foundation
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
https://iopscience.iop.org/article/10.1088/1361-648X/aba295/pdf
Reference59 articles.
1. Quantum Register Based on Individual Electronic and Nuclear Spin Qubits in Diamond
2. Quantum computing with defects
3. High-excitation and high-resolution photoluminescence spectra of bulk AlN
4. Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
5. Defects in AlN as candidates for solid-state qubits
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1. Formation of intrinsic point defects in AlN: a study of donor and acceptor characteristics using hybrid QM/MM techniques;Journal of Materials Chemistry A;2024
2. First-principle study on the effect of point defects on the mechanical properties, thermal conductivity, and optical properties of wurtzite AlN;Vacuum;2023-01
3. Computational study of native defects and defect migration in wurtzite AlN: an atomistic approach;Journal of Materials Chemistry A;2023
4. Optical Properties of Defects;Semiconductor Physics;2023
5. DX center formation in highly Si doped AlN nanowires revealed by trap assisted space-charge limited current;Applied Physics Letters;2022-04-18
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