Reliability of GaN-Based Power Devices
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-77994-2_4
Reference37 articles.
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5. F. Gao et al., Role of oxygen in the OFF-state degradation of AlGaN / GaN high electron mobility transistors. Appl. Phys. Lett. 99, 223506–2231/3 (2011)
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