2D Transient Viscoplastic Model for Dislocation Generation of SiC by PVT Method
Author:
Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-41543-7_17
Reference15 articles.
1. Saddow, S.E., Agarwal, A.: Advances in Silicon Carbide Processing and Applications. Artech House (2004)
2. Gao, B., Kakimoto, K.: Dislocation-density-based modeling of the plastic behavior of 4H–SiC single crystals using the Alexander–Haasen model. J. Cryst. Growth 386, 215–219 (2014)
3. Wijesundara, M., Azevedo, R.: Silicon Carbide Microsystems for Harsh Environments, vol. 22. Springer Science & Business Media (2011)
4. Böttcher, K., Cliffe, K.A.: Three-dimensional thermal stresses in on-axis grown sic crystals. J. Cryst. Growth 284(3), 425–433 (2005)
5. Gao, B., Kakimoto, K.: Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H–SiC single crystals. J. Cryst. Growth 392, 92–97 (2014)
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