Effect of Drain FODs on ESD/LU Immunities in the 60-V High-Voltage nLDMOS
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Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-319-04573-3_107
Reference8 articles.
1. Tan, Y., Kumar, M., Sin, J. K. O., Cai, J., & Lau, J. (2000). A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers. IEEE Electron Device Letters, 21, 82–84.
2. Tan, Y., Kumar, M., Sin, J. K. O., & Cai, J. (2001). A SOI LDMOS technology compatible with CMOS, BJT, and passive components for fully-integrated RF power amplifiers. IEEE Transactions on Electron Devices, 48, 2428–2433.
3. Gajadharsing, J. R. (2003). Low distortion RF-LDMOS power transistor for wireless communications base station applications. IEEE MTT-S International Microwave Symposium (3, pp. 1563–1566).
4. Arnous, M. T., & Boeck, G. (2012). 4 Watt, 45 % bandwidth Si-LDMOS high linearity power amplifier for modern wireless communications systems. 2nd International Conference on Advances in Computational Tools for Engineering Applications (pp. 110–113).
5. Sagneri, A. D., Anderson, D. I., & Perreault, D. J. (2013). Optimization of integrated transistors for very high frequency dc-dc converters. IEEE Transactions on Power Electronics, 28, 3614–3626.
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