Formation of DX-centers in indium doped CdTe
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Publisher
Springer Berlin Heidelberg
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http://link.springer.com/content/pdf/10.1007/978-3-540-85320-6_35.pdf
Reference17 articles.
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3. Mooney, P.M.: Deep donor levels (DX centers) in III–V semiconductor. J. Appl. Phys. 67, Rl–R26 (1990)
4. Burkey, B.C., Khosla, R.P., Fischer, J.R., Losee, D.L.: Persistent photoconductivity in donor-doped Cd1−xZnxTe. J. Appl. Phys. 47, 1095–1102 (1976)
5. Kachaturyan, K., Kaminska, M., Weber, E.R., Becla, P., Street, R.A.: Lattice relaxation of DX-like donors in ZnxCd1−xTe. Phys. Rev. B 40, 6304–6310 (1989)
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1. Structural and Electronic Properties of Indium-Doped n-type Cd-Se-Te Crystals;Journal of Electronic Materials;2024-04-29
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