Monte Carlo Simulation of GaN Diode Including Intercarrier Interactions-Reference-Cited by-同舟云学术

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Monte Carlo Simulation of GaN Diode Including Intercarrier Interactions

Published:2008 Issue: Volume: Page:131-138
ISSN:0302-9743
Container-title:Large-Scale Scientific Computing
language:
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Author:

Ashok A.,Vasileska D.,Hartin O.,Goodnick S. M.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-540-78827-0_13

Reference17 articles.

1. Barker, J., et al.: Bulk GaN and AlGaN/GaN heterostructure drift velocity measurements and comparison to theoretical models. Journal of Applied. Physics 97, 63705 (2005)

2. Bhapkar, U.V., Shur, M.S.: Monte Carlo calculation of velocity-field characteristics of wurtzite GaN. Journal of Applied Physics 82(4), 1649–1655 (1997)

3. Camarchia, V., et al.: Theoretical investigation of GaN permeable base transistors for microwave power applications. Semiconductor Science and Technology 21(1), 13–18 (2006)

4. Farahmand, M., Brennan, K.F.: Comparison between wurtzite phase and zincblende phase GaN MESFETs using a full band Monte Carlo simulation. on Electron Devices 47, 493–497 (2000)

5. Gelmont, B., Kim, K., Shur, M.: Monte Carlo simulation of electron transport in gallium nitride. Journal of Applied Physics 74(3), 1818–1821 (1993)

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