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Optimization studies of CVD growth of GaAs0.6P0.4

  • Published:1978-11 Issue:6 Volume:7 Page:791-821
  • ISSN:0361-5235
  • Container-title:Journal of Electronic Materials
  • language:en
  • Short-container-title:JEM

Author:

Wu C. H.,Solomon R.,Snyder W. L.,Larsen T. L.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and applications of Group III-nitrides;Journal of Physics D: Applied Physics;1998-10-21

2. Thermodynamic Analysis of GaAs1 − x  P  x Vapor Phase Epitaxy;Journal of The Electrochemical Society;1996-08-01

3. A new kinetic model for vapor phase epitaxy of GaAs1−xPxfrom the Ga‐As‐P‐H‐Cl system;Journal of Applied Physics;1991-02

4. References;Thin Films by Chemical Vapour Deposition;1990

5. A correlation between concentration of deep levels and growth conditions for VPEGaP;Crystal Research and Technology;1985-05
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