A correlation between concentration of deep levels and growth conditions for VPEGaP-Reference-Cited by-同舟云学术

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A correlation between concentration of deep levels and growth conditions for VPEGaP

Published:1985-05 Issue:5 Volume:20 Page:625-633
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Seifert W.,Jacobs K.,Pickenhain R.,Biehne G.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference28 articles.

1. Mass Spectrometric Studies of Vapor-Phase Crystal Growth

2. : Current Topics in Materials Science 5, Ch. 2 (Ed. , Amsterdam 1980)

3. Indium phosphide vapor phase epitaxy: A review

4. ;

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phosphorus and Hydrogen;P Phosphorus;1993

2. MOVPE growth and properties of GaP using nitrogen bridged adduct;Journal of Crystal Growth;1992-03

3. Relationship between dislocation generation, vapour phase supersaturation and growth rate in InP layers obtained by vapour phase epitaxy;Materials Science and Engineering: B;1991-11

4. Effect of substrate temperature on the concentration of point defects in vapour phase epitaxial GaP: N,S;Journal of Crystal Growth;1991-02

5. Impurity incorporation and structural defects in hydride VPE InP films;Journal of Crystal Growth;1986-12

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