The carrier lifetime of heat-treated silicon crystals-Reference-Cited by-同舟云学术

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The carrier lifetime of heat-treated silicon crystals

Published:1975-04 Issue:2 Volume:4 Page:281-298
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Graff K.,Pieper H.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02655406.pdf

Reference17 articles.

1. J. D. Beck, R. Conrad, Sol.-St. Com.13, 93 (1973)

2. A.J.R. De Kock, Philips Res. Reports Supplement 1 (1973)

3. T. Abe, Y. Abe, J. I. Chikawa, Semicond. Silicon, Ed. H.R. Huff, R.R. Burgess, 95 (1973)

4. K. Graff, H. Pieper, G. Goldbach, Semicond. Silicon, Ed. H.R. Huff, R.R. Burgess, 170 (1973)

5. 1973 Annual Book of ASTM Standards F 28-66

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge carrier recombination centers in high-purity, dislocation-free, float-zoned silicon due to growth-induced microdefects;Journal of Crystal Growth;1991-02

2. Oxygen partitioning analysis during Czochralski silicon crystal growth via a dopant marker and a simple transfer function modeling technique I. Rotation rate transients;Journal of Crystal Growth;1991-02

3. An Enhancement Phenomenon of the Minority Carrier Lifetime in Annealed Silicon;physica status solidi (a);1990-08-16

4. Minority‐carrier lifetime of magnetic field applied Czochralski silicon wafers;Applied Physics Letters;1988-11-07

5. Micro-defect effects on minority carrier lifetime in high purity dislocation-free silicon single crystals;Solar Cells;1988-05

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