Author:
Bingwen Liang,Yuanxi Zou,Binglin Zhou,Milnes A. G.
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. A. G. Milnes, “Impurity and Defect Levels (Experimental) in Gallium Arsenide,” inAdvances in Electronics and Electron Physics, 61, 63–160 (1983).
2. A. M. Sekela, D. L. Feucht and A. G. Milnes,1974 Conf. Ser.-Inst. Phys., 24, 245.
3. M. O. Watanabe, Y. Ahizawa, N. Sugiyama and T. Nakanisi,13th Int. Symposium on GaAs and Related Compounds, Paper H6, Las Vegas, October 1986.
4. D. L. Partin, A. G. Milnes and L. F. Vassamillet,J. Electron. Mater. 7, 279 (1978).
5. D. L. Partin, J. W. Chen, A. G. Milnes and L. F. Vassamillet,J. Appl. Phys. 50(11), 6845 (1979).
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16 articles.
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