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2. Interdependence of strain, precipitation, and dislocation formation in epitaxial Se-doped GaAs;Abrahams;J. Appl. Phys.,1974
3. Relaxation oscillations and recombination in epitaxial n-type gallium arsenide;Acket;Solid-State Electron.,1971
4. Electrical properties of n-type gallium arsenide at high temperatures;Akita;Jpn. J. Appl. Phys.,1971
5. Infrared absorption spectra of oxygen-doped gallium arsenide;Akkerman;Sov. Phys.–Semicond. (Engl. Transl.),1976