Electrical behaviour of thermally diffused silicon solar cells submitted to rapid annealing-Reference-Cited by-同舟云学术

Electrical behaviour of thermally diffused silicon solar cells submitted to rapid annealing

Published:1985-08 Issue:4 Volume:37 Page:221-224
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Fogarassy E.,Mesli A.,Courcelle E.,Grob A.,Siffert P.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00614820.pdf

Reference21 articles.

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3. Laser and Electron Beam Solid Interactions and Materials Processing, ed. by J.F. Gibbons, L.D. Hess, and T.W. Sigmon (North-Holland, New York 1981)

4. L. Correra, L. Pedulli: Appl. Phys. Lett.37, 55 (1980)

5. K. Nishiyama, M. Arai, N. Watanabe: Jpn. J. Appl. Phys.19, L 563 (1980)

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1. Improvement of charge minority-carrier lifetime inp(boron)-type Czochralski silicon by rapid thermal annealing;Progress in Photovoltaics: Research and Applications;2001

2. Towards high-eficiency silicon solar cells by rapid thermal processing;Progress in Photovoltaics: Research and Applications;1994-04

3. Rapid Thermal Annealing of p‐Type Silicon: Correlation Between Deep‐Level Transient Spectroscopy and Lifetime Measurements;Journal of The Electrochemical Society;1994-03-01

4. Phosphorus diffusion into silicon from a spin‐on source using rapid thermal processing;Journal of Applied Physics;1992-06

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